论文信息 - Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Using a W-La2O3 gated MOSFET structure, we report the effect of substrate and gate injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing n- and p-channel MOSFETs with positive and negative gate voltages respectively, the degradation (Vth shift) after stress is obtained and compared to the polarity of the applied stress.

[1] Chenming Hu,et al. Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability , 1994 .

[2] G. D. Wilka,et al. APPLIED PHYSICS REVIEW High- k gate dielectrics: Current status and materials properties considerations , 2001 .

[3] H. Iwai,et al. Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer , 2004 .

[4] C. Hwang,et al. Properties of lanthanum oxide thin films deposited by cyclic chemical vapor deposition using tris(isopropyl-cyclopentadienyl)lanthanum precursor , 2006 .

[5] Hiroshi Iwai,et al. Thermal stability of lanthanum oxide/Si(100) interfacial transition layer , 2005 .

[6] Hiroshi Iwai,et al. Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing , 2006, IEICE Electron. Express.

[7] Robert W. Brodersen,et al. Quantum yield of electron impact ionization in silicon , 1985 .

[8] H. Iwai,et al. Tunneling in sub-5 nm La2O3 films deposited by E-beam evaporation , 2006 .