Random telegraph signals from proton-irradiated CCDs

It has been shown that proton-induced defects in charge couple devices (CCDs) can demonstrate the classic phenomenology of random telegraph signals (RTSs). These fluctuations take the form of RTSs with well-defined amplitudes and time constants for the high and low dark current states. The time constants are strongly temperature-activated and the evidence suggests the presence of a bistable defect whose structural reconfigurations cause changes in the dark current. Though an important noise source for room-temperature systems, the RTS pulse width is increased on cooling and the effect is not likely to be important below approximately -20 degrees C. Annealing of the RTS defect was found to occur at approximately 100 degrees C. >

[1]  Kenji Natori,et al.  Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface , 1990 .

[2]  Olof Engström,et al.  Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high‐energy electron irradiation and annealing , 1992 .

[3]  S. M. Sze.  Physics of semiconductor devices /2nd edition/ , 1981 .

[4]  J. R. Srour,et al.  Enhanced displacement damage effectiveness in irradiated silicon devices , 1989 .

[5]  S. Machlup,et al.  Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .

[6]  J. R. Letaw,et al.  Proton-nucleus total inelastic cross sections - An empirical formula for E greater than 10 MeV , 1983 .

[7]  G. R. Hopkinson,et al.  Radiation effects on CCDs for spaceborne acquisition and tracking applications , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

[8]  P. Dobson.  Physics of Semiconductor Devices (2nd edn) , 1982 .

[9]  R. A. Hartmann,et al.  Permanent Damage Produced by Single Proton Interactions in Silicon Devices , 1986, IEEE Transactions on Nuclear Science.

[10]  A. Chantre,et al.  Introduction to defect bistability , 1989 .

[11]  J. Vallerga,et al.  Counting of deep-level traps using a charge-coupled device , 1987, IEEE Transactions on Electron Devices.

[12]  Edmund K. Banghart,et al.  A model for charge transfer in buried-channel charge-coupled devices at low temperature , 1991 .

[13]  O. Awadelkarim,et al.  Defect states in 2.0‐MeV electron‐irradiated phosphorus‐doped silicon , 1989 .

[14]  Hirotaka Muto,et al.  Random telegraph signals in small MOSFETs after X-ray irradiation , 1991 .

[15]  Max J. Schulz,et al.  Single defects and noise in sub-μ MOSFETs , 1990, Other Conferences.

[16]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[17]  G. R. Hopkinson,et al.  Cobalt60 and proton radiation effects on large format, 2-D, CCD arrays for an Earth imaging application , 1992 .

[18]  Michael J. Uren,et al.  Individual defects at the Si:SiO2 interface , 1989 .

[19]  G. D. Watkins,et al.  Metastable defects in silicon: hints for DX and EL2? , 1991 .

[20]  Moses T. Asom,et al.  Interstitial Defect Reactions in Silicon , 1987 .

[21]  Interstitial Defect Reactions in Silicon , 1991 .