Optical second-harmonic generation measurement for probing organic device operation

We give a brief overview of the electric-field induced optical second-harmonic generation (EFISHG) technique that has been used to study the complex behaviors of organic-based devices. By analyzing EFISHG images of organic field-effect transistors, the in-plane two-dimensional distribution of the electric field in the channel can be evaluated. The susceptibility tensor of the organic semiconductor layer and the polarization of the incident light are considered to determine the electric field distribution. EFISHG imaging can effectively evaluate the distribution of the vectorial electric field in organic films by selecting a light polarization. With the time-resolved technique, measurement of the electric field originating from the injected carriers allows direct probing of the carrier motion under device operation, because the transient change of the electric field distribution reflects the carrier motion. Some applications of the EFISHG technique to organic electronic devices are reviewed.

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