论文信息 - AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy

AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy

AlxGa1-xAs/GaAs multiple quantum well (MQW) heterojunction structures have been grown by molecular beam epitaxy. Photopumped structures having quantum well sizes as low as 28 Å have shown 300 K and cw performance. MQW's with 28 Å well sizes grown at a substrate temperature of 720°C resulted in an equivalent current density of 2.3 kA/cm2 at a wavelength of about 7,270 Å.

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