Fin field effect transistor and its production method.

Relates to a fin field effect transistor and its manufacturing method, fin field effect transistor includes an active fin which is provided on a substrate, and a gate oxide film pattern which is provided on the surface of the active pin, is provided on the gate oxide film pattern, the active first electrode patterns extending so as to cross the pin, and wherein the laminated on the first electrode pattern, below the second electrode pattern and the active pin surface of the first electrode pattern both sides with a wide width as compared to the first electrode pattern It includes having a source / drain extension regions. The fin field effect transistor is the GIDL current is reduced, as well as have an excellent performance.