论文信息 - Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission - 字舞流文

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

P. Vennégués | M. Leroux | É. Frayssinet | M. Laügt | P. Gibart | Z. Bougrioua | I. Cestier | T. Gühne