NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs

In this work, a predictive and physical compact model for NanoWire/NanoSheet (NW/NS) Gate-All-Around (GAA) MOSFET is presented. Based on a novel methodology for the calculation of the surface potential including quantum confinement, this model is able to handle arbitrary NW/NS cross-section shape of stacked-planar and vertical GAA MOSFETs (circular, square, rectangular). This Nanowire Surface Potential (NSP) based model, validated both by numerical simulations and experimental data, is demonstrated to be very accurate in all operation regimes of GAA MOSFETs.

[1]  O. Rozeau,et al.  UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs , 2013, 2013 IEEE International Electron Devices Meeting.

[2]  J. G. Fossum,et al.  Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs , 2002 .

[3]  Thierry Poiroux,et al.  Surface potential based model of ultra-thin fully depleted SOI MOSFET for IC simulations , 2011, IEEE 2011 International SOI Conference.

[4]  C. Carabasse,et al.  Experimental study on carrier transport limiting phenomena in 10 nm width nanowire CMOS transistors , 2010, 2010 International Electron Devices Meeting.

[5]  G. Gildenblat,et al.  Analytical approximation for the MOSFET surface potential , 2001 .

[6]  Y. Chen,et al.  A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model , 2001 .

[7]  B. Iñíguez,et al.  Continuous analytic I-V model for surrounding-gate MOSFETs , 2004, IEEE Electron Device Letters.

[8]  G. Gildenblat,et al.  PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[9]  Yuan Taur,et al.  Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs , 2007, IEEE Transactions on Electron Devices.

[10]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[11]  F. Stern.  Self-Consistent Results for n -Type Si Inversion Layers , 1972 .