RESEARCH AND INVESTIGATION OF INVERSE EPITAXIAL UHF POWER TRANSISTORS

Abstract : The report describes development work toward a 10 watt 500 Mc silicon npn epitaxial transistor. An extensive design theory permits calculation of important material and geometrical parameters to realize a given performance. Diffusion studies produced a greater understanding of the emitter dip effect, but lacked the control necessary for thin, heavily doped layers. Ion bombardment doping and epitaxial base growth are described; both these methods are promising but require further development. Devices were produced giving up to 7 watts at 500 Mc with 4 db gain. An important device principle, the shorted emitter, is described. Methods of evaluating contact resistance and designing control structures for diffusion evaluation are discussed.