Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

A strong intensity modulation is found in spatially and angular resolved photoluminescence spectra of InGaN∕GaN heterostructures and quantum wells epitaxially grown on Si(111) substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN∕Si and the Air/InGaN interfaces. It can be used for a wavelength stabilization of the sample upon temperature change and, e.g., in the case of light emitting diodes, to additionally reduce the blueshift at increasing injection currents. A simple geometric approach has been chosen to calculate the influence of layer thickness, absorption and refractive indices, as well as detection angle. The cavity can be described quantitatively by a simple three layer Fabry-Perot model. An analytical expression is derived for the external luminescence line shape. Microphotoluminescence measurements at samples with the silicon substrate locally removed corroborate the model.

[1]  E. Purcell,et al.  Resonance Absorption by Nuclear Magnetic Moments in a Solid , 1946 .

[2]  Catalano,et al.  Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.

[3]  Marc Ilegems,et al.  InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror , 2004 .

[4]  J. Bläsing,et al.  Reduction of stress at the initial stages of GaN growth on Si(111) , 2003 .

[5]  Takashi Jimbo,et al.  Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire , 2000 .

[6]  C. Weisbuch,et al.  Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity. , 1992, Physical review letters.

[7]  Yoon-Kyu Song,et al.  Resonant-cavity InGaN quantum-well blue light-emitting diodes , 2000 .

[8]  E. Schubert,et al.  MICROCAVITY EFFECTS IN GAN EPITAXIAL FILMS AND IN AG/GAN/SAPPHIRE STRUCTURES , 1997 .

[9]  C. Weisbuch,et al.  Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends , 1998 .

[10]  Yeong-Her Wang,et al.  Resonant cavity light‐emitting diode , 1992 .

[11]  A. Nurmikko,et al.  Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction , 2001 .

[12]  Henri Benisty,et al.  Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals , 2002 .

[13]  A. Kavokin,et al.  Semiconductor microcavities: towards polariton lasers , 2003 .

[14]  J. Massies,et al.  Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon , 2005 .

[15]  J. Massies,et al.  Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector , 2003 .

[16]  H. R. Philipp,et al.  Optical Constants of Silicon in the Region 1 to 10 ev , 1960 .