New structure for corner compensation in anisotropic KOH etching
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A new compensation layout for the protection of convex corners during anisotropic etching resulting in almost perfectly square corners is presented. The compensation mask design is tested in KOH etching and compared to other compensation designs presented earlier. Advantageous new features are that etching to half of the designed depth of the new corner compensation is geometrically defined and not dependent on KOH concentration - a unique feature - and a high space efficiency, about 20% better than earlier designs for perfect square corners.
[1] K. Bean,et al. Anisotropic etching of silicon , 1978, IEEE Transactions on Electron Devices.
[2] Peter Enoksson,et al. Fluid density sensor based on resonance vibration , 1995 .
[3] Peter Enoksson,et al. Vibration modes of a resonant silicon tube density sensor , 1996 .