Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition
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S. Denbaars | S. Nakamura | J. Speck | Yifan Yao | M. Iza | Feng Wu | Burhan K. Saifaddin | Abdullah S. Almogbel | C. Zollner
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S. Denbaars | S. Nakamura | J. Speck | Yifan Yao | M. Iza | Feng Wu | Burhan K. Saifaddin | Abdullah S. Almogbel | C. Zollner