Evanescently-coupled hybrid III-V/silicon laser based on DVS-BCB bonding

Hybrid III-V/Silicon lasers based on evanescent coupling are one of the most advanced and the most promising devices in the ongoing efforts to build an efficient light source on a silicon platform. Most of the recently reported devices are based on direct die-towafer bonding of III-V epitaxial layers to silicon waveguides, which might prove difficult to implement in an industrial-scale fabrication process. As an alternative approach, in this paper, we present an evanescently-coupled, hybrid III-V/silicon laser based on adhesive DVS-BCB bonding. The device layout, the fabrication process and the achieved results are presented and discussed.