Methodology in Computer-Aided Design for Process and Device Development

The previous chapters have presented an overview of computer-aided design (CAD) in VLSI development, as well as the simulation tools currently used at Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in device designs.

[1]  Sidney Addelman,et al.  trans-Dimethanolbis(1,1,1-trifluoro-5,5-dimethylhexane-2,4-dionato)zinc(II) , 2008, Acta crystallographica. Section E, Structure reports online.

[2]  K. Cham,et al.  Device design for the submicrometer p-channel FET with n+polysilicon gate , 1984, IEEE Transactions on Electron Devices.

[3]  R. R. Troutman,et al.  VLSI limitations from drain-induced barrier lowering , 1979 .

[4]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.