Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions

The photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate into the porous layer correlates with the degree of quenching of the photoluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the sample toward the bulk.

[1]  K. H. Jung,et al.  Intense photoluminescence from laterally anodized porous Si , 1991 .

[2]  Michael J. Uren,et al.  Microstructure and formation mechanism of porous silicon , 1985 .

[3]  Kaplan,et al.  SiHx excitation: An alternate mechanism for porous Si photoluminescence. , 1992, Physical review. B, Condensed matter.

[4]  Nobuyoshi Koshida,et al.  Visible electroluminescence from porous silicon , 1992 .

[5]  Y. Mochizuki,et al.  Effects of thermal annealing on porous silicon photoluminescence dynamics , 1992 .

[6]  S. D. Collins,et al.  Porous silicon formation mechanisms , 1992 .

[7]  T. D. Harris,et al.  Luminescence and structural study of porous silicon films , 1992 .

[8]  Michael J. Uren,et al.  An experimental and theoretical study of the formation and microstructure of porous silicon , 1985 .

[9]  S. D. Collins,et al.  Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study , 1989 .

[10]  James H. Stathis,et al.  Luminescence degradation in porous silicon , 1992 .

[11]  A. Uhlir.  Electrolytic shaping of germanium and silicon , 1956 .

[12]  M. Nayfeh,et al.  Quenching of porous silicon photoluminescence by deposition of metal adsorbates , 1993 .

[13]  L. Canham.  Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[14]  Volker Lehmann,et al.  Porous silicon formation: A quantum wire effect , 1991 .

[15]  M. B. Robinson,et al.  Effect of thermal annealing and surface coverage on porous silicon photoluminescence , 1992 .

[16]  J. Gómez‐Rodríguez,et al.  Morphology of porous silicon studied by STM/SEM , 1990 .

[17]  Muller,et al.  Mechanisms of visible-light emission from electro-oxidized porous silicon. , 1992, Physical review. B, Condensed matter.