论文信息 - Low driving voltage (< 400mVpp) electro-absorption modulator laterally integrated with VCSEL

Low driving voltage (< 400mVpp) electro-absorption modulator laterally integrated with VCSEL

A compact (8μm long) electro-absorption slow-light modulator is laterally integrated with a 980nm InGaAs VCSEL incorporating a bow-tie-shape oxide aperture. We demonstrate a low driving voltage below 400mVpp and large signal modulation up to 25Gbps.

[1] K. Geib,et al. Direct Modulation Characteristics of Composite Resonator Vertical-Cavity Lasers , 2006, IEEE Journal of Quantum Electronics.

[2] Fumio Koyama,et al. Bandwidth enhancement of single-mode VCSEL with lateral optical feedback of slow light , 2011, IEICE Electron. Express.

[3] W. Marsden. I and J , 2012 .

[4] P. Westbergh,et al. Advances in VCSELs for Communication and Sensing , 2010, IEEE Journal of Selected Topics in Quantum Electronics.

[5] C. Chen,et al. Analog and Digital Functionalities of Composite-Resonator Vertical-Cavity Lasers , 2010, Journal of Lightwave Technology.

[6] 35-$\mu{\rm m}$ Bragg Reflector Waveguide Modulator for High-Speed and Energy-Saving Operation , 2013, IEEE Photonics Technology Letters.

[7] OFC , 2013 .

[8] Fumio Koyama,et al. 29 GHz directly modulated 980 nm vertical-cavity surface emitting lasers with bow-tie shape transverse coupled cavity , 2013 .

[9] Xiaoxue Zhao,et al. Novel modulated-master injection-locked 1.55-µm VCSELs , 2006 .

[10] Andrew G. Glen,et al. APPL , 2001 .