Van der Waals Interface Transistors as Light Sources with Bias Tunable Spectrum
暂无分享,去创建一个
Shahriar | C. N. Lau | D. Smirnov | A. Morpurgo | L. Balicas | Kenji Watanabe | T. Taniguchi | N. Ubrig | Zhengguang Lu | M. Philippi | D. Mauro | H. Henck | D. Shcherbakov | Daniil Domaretskiy | Wenkai Zheng | Ignacio Gutiérrez-Lezama | Fal'ko | Memaran | I. Vladimir | Diego Mauro | Kenji Watanabe | Ignacio Gutiérrez-Lezama
[1] Huanli Dong,et al. Organic Light‐Emitting Transistors Entering a New Development Stage , 2021, Advanced materials.
[2] A. Morpurgo,et al. Ionic gate spectroscopy of 2D semiconductors , 2021, Nature Reviews Physics.
[3] I. Radu,et al. Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key , 2020, Nanotechnology.
[4] A. Krier,et al. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode , 2020, Applied Physics Letters.
[5] J. Howarth,et al. Design of van der Waals interfaces for broad-spectrum optoelectronics , 2019, Nature Materials.
[6] H. Schneider,et al. Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties. , 2019, ACS applied materials & interfaces.
[7] K. Novoselov,et al. Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures , 2019, Nature Communications.
[8] Seung Gi Seo,et al. Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers , 2019, IEEE Electron Device Letters.
[9] S. Haigh,et al. Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy. , 2019, ACS nano.
[10] B. Gerardot,et al. Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide , 2019, Nature Communications.
[11] M. Lukin,et al. Electrical control of interlayer exciton dynamics in atomically thin heterostructures , 2018, Science.
[12] S. Haigh,et al. Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures , 2018, 2D Materials.
[13] G. Eda,et al. Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides , 2018, Advanced materials.
[14] A. Morpurgo,et al. Semiconducting van der Waals Interfaces as Artificial Semiconductors. , 2018, Nano letters.
[15] Xiaoxi Zhu,et al. Functional inks and printing of two-dimensional materials. , 2018, Chemical Society reviews.
[16] Ming C. Wu,et al. Large-area and bright pulsed electroluminescence in monolayer semiconductors , 2018, Nature Communications.
[17] Kenji Watanabe,et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures , 2018, Nature Photonics.
[18] K. Novoselov,et al. Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. , 2017, Physical review letters.
[19] M. Nakano,et al. Endeavor of Iontronics: From Fundamentals to Applications of Ion‐Controlled Electronics , 2017, Advanced materials.
[20] Xiaodong Xu,et al. Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures , 2017, Science Advances.
[21] V. Fal’ko,et al. Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model , 2016, 1611.00262.
[22] A. Morpurgo,et al. Electroluminescence from indirect band gap semiconductor ReS2 , 2016, 1610.00895.
[23] A. Morpurgo,et al. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS₂. , 2015, Nano letters.
[24] Udo Schwingenschlögl,et al. Heterostructures of transition metal dichalcogenides , 2015 .
[25] Hsin-Ying Chiu,et al. Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure. , 2014, ACS nano.
[26] A. Morpurgo,et al. Surface transport and band gap structure of exfoliated 2H-MoTe2 crystals , 2014, 1407.1219.
[27] S. Haigh,et al. Heterostructures produced from nanosheet-based inks. , 2014, Nano letters.
[28] Y. J. Zhang,et al. Electrically Switchable Chiral Light-Emitting Transistor , 2014, Science.
[29] Helmuth Berger,et al. Mono- and bilayer WS2 light-emitting transistors. , 2014, Nano letters.
[30] Aaron M. Jones,et al. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures , 2014, Nature Communications.
[31] Junsheng Yu,et al. Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone , 2013 .
[32] C. Frisbie,et al. A pedagogical perspective on ambipolar FETs. , 2013, Chemphyschem : a European journal of chemical physics and physical chemistry.
[33] Aaron M. Jones,et al. Electrical control of neutral and charged excitons in a monolayer semiconductor , 2012, Nature Communications.
[34] A. Morpurgo,et al. Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated transistors. , 2012, Nano letters.
[35] Yoshihiro Iwasa,et al. Ambipolar MoS2 thin flake transistors. , 2012, Nano letters.
[36] B. Wees,et al. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride , 2011, 1110.1045.
[37] R. Capelli,et al. Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes. , 2010, Nature materials.
[38] M. Henini,et al. Upconversion electroluminescence in InAs quantum dot light-emitting diodes , 2008 .
[39] Chihaya Adachi,et al. High current density in light-emitting transistors of organic single crystals. , 2008, Physical review letters.
[40] M. Muccini. A bright future for organic field-effect transistors , 2006, Nature materials.
[41] Michele Muccini,et al. Ambipolar light-emitting organic field-effect transistor , 2004 .
[42] V. Podzorov,et al. High-mobility field-effect transistors based on transition metal dichalcogenides , 2004, cond-mat/0401243.
[43] Milton Feng,et al. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors , 2004 .
[44] Heinz von Seggern,et al. Light-emitting field-effect transistor based on a tetracene thin film. , 2003, Physical review letters.
[45] E. van Veenendaal,et al. Solution-processed ambipolar organic field-effect transistors and inverters , 2003, Nature materials.
[46] K. O'Donnell,et al. Temperature dependence of semiconductor band gaps , 1991 .
[47] A. Chevy. Improvement of growth parameters for Bridgman-grown InSe crystals☆ , 1984 .
[48] R. Stephenson. A and V , 1962, The British journal of ophthalmology.
[49] Aaas News,et al. Book Reviews , 1893, Buffalo Medical and Surgical Journal.
[50] Kenji Watanabe,et al. Supplemental note : Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride , 2015 .
[51] Richard H. Friend,et al. Spatial control of the recombination zone in an ambipolar light-emitting organic transistor , 2006 .