论文信息 - Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate

Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate

Room‐temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at a 1.54 μm wavelength and exhibits no degradation after over 2000 h of operation. Employing a hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high‐quality MQW layers are obtained. A stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer.

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