On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

Abstract We present a new method for the on-wafer-characterisation for the reverse recovery behaviour of integrated diodes, which can perform on-wafer automated measurements over a wide range of different bias and pulsing conditions. The system is based on a Transmission-Line-Pulsing (TLP) technique and can be used to characterise diodes down to the regime of 10 ns, using pulses of several hundred volts and several Ampere peak current.

[1]  N. Shammas,et al.  Forward and reverse recovery behaviour of diodes in power converter applications , 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

[2]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[3]  Werner Simburger,et al.  Rise-Time Filter Design for Transmission-Line Pulse Measurement Systems , 2009, 2009 German Microwave Conference.

[4]  H. Gieser,et al.  Very fast transmission line pulsing of integrated structures and the charged device model , 1998, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C.

[5]  M. Stecher,et al.  Key technologies for system-integration in the automotive and Industrial Applications , 2005, IEEE Transactions on Power Electronics.