InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and L<sub>g</sub> = 130 nm operating at 0.5 V, on-current as high as I<sub>on</sub> = 601 μA/μm (at fixed I<sub>off</sub> = 100 nA/μm) is achieved. This record performance is enabled by g<sub>m, ext</sub> = 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm<sup>2</sup>/V.s at n<sub>s</sub> = 6.7×10<sup>12</sup> cm<sup>-2</sup>. Device simulations further elucidate the performance potential of III-V N-MOSFETs.