High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling
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Lorenzo Pavesi | Georg Pucker | Pierluigi Bellutti | A. Anopchenko | Lorenzo Pavesi | A. Anopchenko | G. Pucker | P. Bellutti | A. Marconi | A. Marconi | M. Wang | M. Wang
[1] Lorenzo Pavesi,et al. Light emitting devices based on nanocrystalline-silicon multilayer structure , 2009 .
[2] N. Koshida. Device Applications of Silicon Nanocrystals and Nanostructures , 2009 .
[3] N. Koshida,et al. Nanocrystalline Si EL Devices , 2009 .
[4] Xizhang Wang,et al. Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions , 2008 .
[5] Gong-Ru Lin,et al. Microwatt MOSLED Using ${\hbox {SiO}}_{\rm x}$ With Buried Si Nanocrystals on Si Nano-Pillar Array , 2008, Journal of Lightwave Technology.
[6] J. Carreras,et al. Silicon Nanocrystal Field-Effect Light-Emitting Devices , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[7] Lorenzo Pavesi,et al. Light Emitting Silicon for Microphotonics , 2003 .
[8] Francisco Jimenez-Molinos,et al. Direct and trap-assisted elastic tunneling through ultrathin gate oxides , 2002 .
[9] K.-T. Chang,et al. Dominance of interface effects in SRO-SiO/sub 2/-SRO DEIS structures for EAROMs , 1988 .
[10] Thomas N. Theis,et al. Electroluminescence studies in silicon dioxide films containing tiny silicon islands , 1984 .