Evaluating different implementations of online junction temperature sensing for switching power semiconductors

Switching power semiconductor online junction temperature (T<sub>j</sub>) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online T<sub>j</sub> sensing methods. This paper includes T<sub>j</sub> sensing methods based on device power dissipation, T<sub>j</sub> sensing methods based on the “diode-on-die technology”, T<sub>j</sub> sensing methods based on device on-state analysis, and T<sub>j</sub> sensing methods based on device switching transients. Advantages and limits of these methods are also provided.

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