A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar

A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f/sub T/, 0.25 /spl mu/m-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input balun and for interstage matching and an LC-type output balun with planar inductors. With this output network no external elements are required. At 1.2 V, 1.5 V, 2 V supply voltages output powers of 17 dBm, 18.9 dBm, 20.7 dBm are achieved at 5.8 GHz. The small-signal gain is 23 dB.

[1]  W. Simburger,et al.  A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[2]  H. Knapp,et al.  Lumped and distributed lattice-type LC-baluns , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[3]  J.R. Long,et al.  Monolithic transformers for silicon RF IC design , 2000, IEEE Journal of Solid-State Circuits.

[4]  Arpad L. Scholtz,et al.  Modeling of monolithic lumped planar transformers up to 20 GHz , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).

[5]  André van Bezooijen,et al.  Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module , 2001 .

[6]  Ali Hajimiri,et al.  A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).

[7]  Werner Simburger,et al.  A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz , 1999, IEEE J. Solid State Circuits.

[8]  R. A. Hadaway,et al.  Monolithic transformers for silicon RF IC design , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).