Noise behavior of amorphous GexSi1−xOy for microbolometer applications

Abstract High resistivity sputtered a-Ge x Si 1− x O y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/ f noise was measured at several measuring currents, resulting in a 1/ f noise factor of 2.9 × 10 −11 that can be used for further design and modeling.

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