论文信息 - 50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.

[1] Miller,et al. Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect. , 1986, Physical review. B, Condensed matter.

[2] D. Miller,et al. A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides , 2012, 8th IEEE International Conference on Group IV Photonics.

[3] Ashok V. Krishnamoorthy,et al. Ultralow-power high-performance Si photonic transmitter , 2010, 2010 Conference on Optical Fiber Communication (OFC/NFOEC), collocated National Fiber Optic Engineers Conference.

[4] P. Dumon,et al. Highly Uniform 25 Gb/s Si Photonics Platform for High-Density, Low-Power WDM Optical Interconnects , 2014 .

[5] Paul Crozat,et al. Integrated germanium optical interconnects on silicon substrates , 2014, Nature Photonics.

[6] A. Biberman,et al. An ultralow power athermal silicon modulator , 2014, Nature Communications.

[7] David A. B. Miller,et al. Device Requirements for Optical Interconnects to Silicon Chips , 2009, Proceedings of the IEEE.

[8] Tom Baehr Jones,et al. 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm , 2013, OFC 2014.

[9] Jurgen Michel,et al. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators , 2008 .