Highly efficient 1.5GHz si power MOSFET for digital cellular front end

A 1.5GHz Si power MOSFET with a 55% power-added efficiency at a 6V power supply voltage has been developed. This device is very promising for the high-power amplifiers of a digital cellular telephone front end. Features of the device have a submicrometer-channel structure and a Self-aligned &ain contact structure (SDC), which exhibit an on-state resistance of as low as 0.3Q an output capacitance of smaller than l5pF and a cutoff frequency of as high as 5GHz.