论文信息 - Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function

Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function

Abstract The mechanism of direct tunneling (DT) for electron emission from the n-type Si substrates to the thin SiO 2 film is examined analytically using the Wentzel, Kramers, Brillouin method with a consideration of the Fermi–Dirac distribution function for electrons at room temperature. The calculated DT currents reproduced the measured data more precisely than those without a consideration of the distribution function at room temperature particularly in the low voltages.

Naoto Matsuo | Hiroyuki Kihara | Yoshinori Takami

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