Modeling and measurement of 1/f noise characteristics of silicon BJTs

We present a method for measuring and extracting the BJT SPICE noise model parameters AF and KF based on an analysis of the general small signal equivalent circuit and the role of the BJT noise sources. Modeled and measured low-frequency noise data is presented for three high-frequency Motorola bipolar technologies.<<ETX>>

[1]  Paolo Antognetti,et al.  Semiconductor Device Modeling with Spice , 1988 .

[2]  J. Teplik,et al.  An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[3]  N. Tracht,et al.  MOSAIC V-a very high performance bipolar technology , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.