Device and Integration Technology for Silicon Photonic Transmitters

The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.

[1]  M. Fisher,et al.  Large-scale photonic integrated circuits , 2005, 2011 ICO International Conference on Information Photonics.

[2]  Assia Barkai,et al.  Integrated hybrid silicon triplexer. , 2010, Optics express.

[3]  J. Bowers,et al.  III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects , 2010 .

[4]  Yasuhiko Arakawa,et al.  Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. , 2010, Optics express.

[5]  J. Michel,et al.  Ge-on-Si laser operating at room temperature. , 2010, Optics letters.

[6]  Hui-Wen Chen,et al.  25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode. , 2010, Optics express.

[7]  Di Liang,et al.  Electrically-pumped compact hybrid silicon microring lasers for optical interconnects. , 2009, Optics express.

[8]  F. Kish,et al.  Advanced photonic integration and high-index-contrast circuit , 2009, 2009 14th OptoElectronics and Communications Conference.

[9]  Di Liang,et al.  Photonic integration: Si or InP substrates? , 2009 .

[10]  Di Liang,et al.  Single wavelength silicon evanescent lasers , 2009, 2009 Asia Communications and Photonics conference and Exhibition (ACP).

[11]  Avi Zadok,et al.  Electrically pumped hybrid evanescent Si/InGaAsP lasers. , 2009, Optics letters.

[12]  J. Bowers,et al.  Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product , 2009 .

[13]  Omri Raday,et al.  Integration of hybrid silicon lasers and electroabsorption modulators. , 2008, Optics express.

[14]  L. Di Cioccio,et al.  A Compact SOI-Integrated Multiwavelength Laser Source Based on Cascaded InP Microdisks , 2008, IEEE Photonics Technology Letters.

[15]  Jurgen Michel,et al.  Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators , 2008 .

[16]  J. Bowers,et al.  High speed hybrid silicon evanescent electroabsorption modulator. , 2008, Optics express.

[17]  Dazeng Feng,et al.  Hybrid Silicon Photonics for Low-Cost High-Bandwidth Link Applications , 2008 .

[18]  Qianfan Xu,et al.  Silicon microring resonators with 1.5-μm radius , 2008 .

[19]  Ansheng Liu,et al.  Silicon-on-insulator eight-channel optical multiplexer based on a cascade of asymmetric Mach-Zehnder interferometers. , 2008, Optics letters.

[20]  Di Liang,et al.  A distributed feedback silicon evanescent laser. , 2008, Optics express.

[21]  Juthika Basak,et al.  40 Gbit/s silicon optical modulator for highspeed applications , 2007 .

[22]  Ying-Hao Kuo,et al.  A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector. , 2007, Optics express.

[23]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[24]  A. Chandrakasan,et al.  18Gb/s Optical IO: VCSEL Driver and TIA in 90nm CMOS , 2007, 2007 IEEE Symposium on VLSI Circuits.

[25]  Omri Raday,et al.  A hybrid AlGaInAs-silicon evanescent waveguide photodetector. , 2007, Optics express.

[26]  Jurgen Michel,et al.  High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.

[27]  M.N. Sysak,et al.  40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters , 2007, Journal of Lightwave Technology.

[28]  J. Bowers,et al.  Hybrid Silicon Evanescent Laser in a Silicon-on-Insulator Waveguide , 2007, OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference.

[29]  Omri Raday,et al.  Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector , 2007, SPIE Optics East.

[30]  Nahum Izhaky,et al.  High-speed optical modulation based on carrier depletion in a silicon waveguide. , 2007, Optics express.

[31]  Dan Song,et al.  A Fully Integrated 4 $\times$ 10-Gb/s DWDM Optoelectronic Transceiver Implemented in a Standard 0.13 $\mu{\hbox {m}}$ CMOS SOI Technology , 2006, IEEE Journal of Solid-State Circuits.

[32]  F. Xia,et al.  Ultracompact optical buffers on a silicon chip , 2007 .

[33]  Hyundai Park,et al.  Design and Fabrication of Optically Pumped Hybrid Silicon-AlGaInAs Evanescent Lasers , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[34]  Jeremy Witzens,et al.  CMOS Photonics Using Germanium Photodetectors , 2006 .

[35]  J. Bowers,et al.  Electrically pumped hybrid AlGaInAs-silicon evanescent laser. , 2006, Optics express.

[36]  Takeo Maruyama,et al.  GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate. , 2006, Optics express.

[37]  D. Kucharski,et al.  A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13- $\mu{\hbox {m}}$ CMOS SOI Technology , 2006, IEEE Journal of Solid-State Circuits.

[38]  H. Tsai,et al.  Large-scale photonic integrated circuits , 2007, IEEE Journal of Selected Topics in Quantum Electronics.

[39]  D. Miller,et al.  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon , 2005, Nature.

[40]  Qianfan Xu,et al.  Micrometre-scale silicon electro-optic modulator , 2005, Nature.

[41]  M. Paniccia,et al.  A continuous-wave Raman silicon laser , 2005, Nature.

[42]  Bahram Jalali,et al.  Demonstration of a silicon Raman laser. , 2004, Optics express.

[43]  T. Baba,et al.  Very Compact Arrayed-Waveguide-Grating Demultiplexer Using Si Photonic Wire Waveguides , 2004 .

[44]  Y. Vlasov,et al.  Losses in single-mode silicon-on-insulator strip waveguides and bends. , 2004, Optics express.

[45]  M. Paniccia,et al.  A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor , 2004, Nature.

[46]  Larry A. Coldren,et al.  A quantum-well-intermixing process for wavelength-agile photonic integrated circuits , 2002 .

[47]  H. Kawanami,et al.  Heteroepitaxial technologies of III-V on Si , 2001 .

[48]  Dennis Derickson,et al.  Fiber optic test and measurement , 1998 .

[49]  Jang-Kyoo Shin,et al.  Reduction of threading dislocation density in InP‐on‐Si heteroepitaxy with strained short‐period superlattices , 1996 .

[50]  T. Ueda,et al.  Method to Obtain Low-Dislocation-Density Regions by Patterning with SiO2 on GaAs/Si Followed by Annealing , 1994 .

[51]  Y. Horikoshi,et al.  Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy , 1991 .

[52]  Yoshio Itoh,et al.  Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices , 1989 .

[53]  Kang L. Wang,et al.  An investigation on surface conditions for Si molecular beam epitaxial (MBE) growth , 1985 .

[54]  Shyh Wang,et al.  Semiconductor injection lasers with a circular resonator , 1980 .