Real-time observation of electron-stimulated effects on Si(001)-(2 × 1) by optical reflectance spectroscopic methods

We have studied the process of electron-stimulated defect formation on a Si(001)-(2 × 1) surface by means of a combination of two different surface optical methods, surface differential reflectance spectroscopy and reflectance anisotropy spectroscopy. Time courses obtained with both methods followed an exponential curve during electron irradiation over the range of 100–1000 eV. The spectral features and related physical phenomena are discussed.

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