论文信息 - Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour - 字舞流文

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

D. Planson | L. Ottaviani | Stéphane Biondo | W. Vervisch | M. Lazar | O. Palais | F. Milési | J. Duchaine | R. Daineche | F. Torregrosa