Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique

Abstract Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n -type InAs 0.89 Sb 0.11 lattice-matched to n -type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K . By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE c = 0.82 eV and ΔE v = 0.36. The electron affinity of InAs 0.89 Sb 0.11 alloy is also determined to be X = 4.87 eV .

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