An S-band 100W GaN Protection Switch

A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100 W, the insertion loss of 0.97 dB, and the isolation of 18.7 dB at 10% bandwidth in S-band.

[1]  H. Ishida,et al.  A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration , 2005, IEEE Transactions on Electron Devices.

[2]  J. Sherman.  A PIN diode switch that operates at 100 watts CW at C-band , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[3]  T. Nishino,et al.  A Millimeter-Wave Low-Loss and High-Power Switch MMIC using Multiple FET Resonators , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[4]  Y. Iyama,et al.  A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[5]  M. Nishida,et al.  Ultra-compact 1 W GaAs SPDT switch IC , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[6]  C. Kermarrec,et al.  Novel high performance SPDT power switches using multi-gate FET's , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[7]  L. D. Reynolds,et al.  An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch , 1982 .

[8]  V. Kaper,et al.  Monolithic AlGaN/GaN HEMT SPDT switch , 2004 .

[9]  Makoto Matsunaga,et al.  High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs , 1992 .

[10]  R. Tayrani,et al.  A monolithic high power Ka-band PIN switch , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[11]  G. Simin,et al.  High-power operation of III-N MOSHFET RF switches , 2005, IEEE Microwave and Wireless Components Letters.

[12]  Kye-Ik Jeon,et al.  1-26 GHz high power p-i-n diode switch , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[13]  T. Sasaki,et al.  A 1.9 GHz SPDT switch implemented with GaN HFETs featuring two different depth-recesses in i-AlGaN , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[14]  Peter J. Katzin,et al.  Monolithic FET structures for high-power control component applications , 1989 .