High Performance Thermistor Based on Si1−xGex/Si Multi Quantum Wells

This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si<sub>1−x</sub>Ge<sub>x</sub>/Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K<sub>1/f</sub>). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of −5.5 %/K accompanied by a K<sub>1/f</sub> of <inline-formula> <tex-math notation="LaTeX">$5.8\times 10^{-13}$ </tex-math></inline-formula> for <inline-formula> <tex-math notation="LaTeX">$25~\mu \text{m} \times 25~\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$3.4\times 10^{-15}$ </tex-math></inline-formula> for <inline-formula> <tex-math notation="LaTeX">$200~\mu \text{m} \times 200~\mu \text{m}$ </tex-math></inline-formula> pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.