论文信息 - 405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material

405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material

We have developed a high resolution resist for laser thermal lithography and a fabrication method for this resist. We designed a resist material which has specific desired properties. We aimed to raise the gasification temperature and achieve a sharply peaked temperature profile so that holes are formed only in the center of the laser spot. We were able to perform lithography with a half pitch of 40 nm. Furthermore, using the result of this lithography as a dry etching mask, we were able to perform dry etching on a number of materials, including SiO2 and sapphire.

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