Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H_2 and Ar dilution
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Y. Hernández | T. Felter | R. Ambrosio | Y. Kudriavtsev | R. Asomoza | A. Kosarev | R. Silva-González | A. Torres | C. Zuniga | A. Abramov | E. Gómez-Barojas | Y. Kudriavtsev | A. Ilinski