Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy

In this paper, the influence of growth rate on the dopant confinement of silicon delta-doped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) was studied in detail. It was found that the growth rate influences the dopant confinement of Si delta-doped GaAs layers in the case of low silane flows. In contrast, at higher silane flows, growth rate has very little effect on the carrier confinement. The Si delta-doped GaAs layers with very good confinement and high sheet carrier concentration have been achieved under optimal conditions of LP-MOVPE.