Effect of hydrogen termination on the work of adhesion between rough polycrystalline silicon surfaces

A novel micromachined test structure has been used to measure the work of adhesion between polycrystalline silicon surfaces. The effects of several surface treatments, including a hydrogen- and an ammonium-fluoride-induced hydrogen termination and a hydrogen peroxide chemical oxidation, have been investigated with these test structures. A reduction in the average apparent work of adhesion by a factor of 2000 has been observed on the NH4F-treated surface compared to the oxide-coated surface. By using x-ray photoelectron spectroscopy and atomic force microscopy, the observed reduction is traced to the combined effect of the surface chemistry and topography. This work demonstrates that a hydrophobic, rough surface provides a significant reduction of the apparent work of adhesion in polysilicon micromachined devices.

[1]  L Volpe,et al.  Nature of static friction time dependence , 1992 .

[2]  Roger T. Howe,et al.  Ammonium Fluoride Anti-stiction Treatments For Polysilicon Microstructures , 1995, Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.

[3]  W. R. Runyan,et al.  Semiconductor integrated circuit processing technology , 1990 .

[4]  Roya Maboudian,et al.  Stability of ammonium fluoride‐treated Si(100) , 1995 .

[5]  R. Crooks,et al.  Probing adhesion forces at the molecular scale , 1995 .

[6]  C. Takoudis,et al.  Fundamentals of two‐step etching techniques for ideal silicon‐hydrogen termination of silicon(111) , 1994 .

[7]  C. Mate,et al.  Overcoats and Lubrication for Thin Film Disks , 1990 .

[8]  C. Mastrangelo,et al.  A simple experimental technique for the measurement of the work of adhesion of microstructures , 1992, Technical Digest IEEE Solid-State Sensor and Actuator Workshop.

[9]  E. Fuller,et al.  Closure and Repropagation of Healed Cracks in Silicate Glass , 1985 .

[10]  W. Kern The Evolution of Silicon Wafer Cleaning Technology , 1990 .

[11]  R. Behm,et al.  Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2 × 1)H reconstructed Si(100) terraces versus (111) facetting , 1993 .

[12]  R. Howe,et al.  Young's Modulus Of In Situ Phosphorus-doped Polysilicon , 1995, Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.

[13]  R. Howe Surface micromachining for microsensors and microactuators , 1988 .

[14]  Gianfranco Vidali,et al.  Potentials of physical adsorption , 1991 .

[15]  Y. Chabal,et al.  ELECTRON-ENERGY-LOSS CHARACTERIZATION OF THE H-TERMINATED SI(111) AND SI(100) SURFACES OBTAINED BY ETCHING IN NH4F , 1991 .

[16]  M. Niwano,et al.  Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopy , 1992 .

[17]  R. Behm,et al.  Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutions , 1991 .

[18]  David Tabor,et al.  The effect of surface roughness on the adhesion of elastic solids , 1975, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[19]  Y. Kamigaki,et al.  SiSiO2 interface characterization by ESCA , 1979 .

[20]  R. Schulz,et al.  Oxidation of HF-treated Si wafer surfaces in air , 1990 .

[21]  J. Israelachvili Intermolecular and surface forces , 1985 .

[22]  H. Tilmans,et al.  Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanisms , 1994 .