论文信息 - Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC - 字舞流文

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

A. Henry | E. Janzén | T. Ohshima | J. Isoya | N. Morishita | H. Pedersen | C. Hemmingsson | F. C. Beyer | E. Janzén