论文信息 - Gate waveform effects on high-efficiency PA design: An experimental validation

Gate waveform effects on high-efficiency PA design: An experimental validation

In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5×1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.

[1] A. Raffo,et al. A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load Line , 2009, IEEE Transactions on Microwave Theory and Techniques.

[2] C. Weitzel,et al. RF power amplifiers for wireless communications , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[3] Valeria Vadala,et al. Behavioral Modeling of GaN FETs: A Load-Line Approach , 2014, IEEE Transactions on Microwave Theory and Techniques.

[4] Patrick Roblin. Nonlinear RF circuits and nonlinear vector network analyzers : interactive measurement and design techniques , 2011 .

[5] Valeria Vadala,et al. Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System , 2010, IEEE Transactions on Microwave Theory and Techniques.

[6] Franco Giannini,et al. Class G approach for low‐voltage, high‐efficiency PA design , 2000 .

[7] P.J. Tasker. Practical waveform engineering , 2009, IEEE Microwave Magazine.

[8] Franco Giannini,et al. High Efficiency RF and Microwave Solid State Power Amplifiers , 2009 .