论文信息 - Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer

Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer

Improvements in crystalline quality of GaAs epilayers on Si have been achieved through the use of low-temperature (LT) GaAs intermediate layer grown at 230° C. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images.

C. Phua | Tow Chong Chong Tow Chong Chong | Wai Shing Lau Wai Shing Lau

[1] Miles V. Klein,et al. Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates , 1987 .

[2] M. Umeno,et al. MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers , 1984 .

[3] A. M. Sergent,et al. GaAs on Si Grown by Mbe: Progress and Applications for Selectivity Doped Heterojunction Transistors (SDHTs) , 1988 .