论文信息 - A monolithic pixel sensor in 0.15 μm fully depleted SOI technology

A monolithic pixel sensor in 0.15 μm fully depleted SOI technology

Abstract This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m 2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e - beam at the LBNL ALS.

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