Advances in the synthesis of InAs and GaAs nanowires for electronic applications
暂无分享,去创建一个
Shadi A. Dayeh | Cesare Soci | Xinyu Bao | C. Soci | S. Dayeh | X. Bao | Deli Wang | Deli Wang
[1] M. Koguchi,et al. Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type , 1992 .
[2] Zhong Lin Wang. Zinc oxide nanostructures: growth, properties and applications , 2004 .
[3] Charles M. Lieber,et al. A laser ablation method for the synthesis of crystalline semiconductor nanowires , 1998, Science.
[4] L.-E. Wernersson,et al. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate , 2008, IEEE Electron Device Letters.
[5] I. Avramov. Kinetics of growth of nanowhiskers (nanowires and nanotubes) , 2007, Nanoscale research letters.
[6] C. Cao,et al. Effect of size in nanowires grown by the vapor-liquid-solid mechanism , 2006 .
[7] Kiyoshi Takahashi,et al. Growth of InAs Whiskers in Wurtzite Structure , 1966 .
[8] E. Yu,et al. Optimal Control over the InAs Nanowire Growth for System Integration and their Structural and Transport Properties , 2008, 2008 8th IEEE Conference on Nanotechnology.
[9] Peidong Yang,et al. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires , 2002 .
[10] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[11] Charles M. Lieber,et al. Size-Dependent Photoluminescence from Single Indium Phosphide Nanowires , 2002 .
[12] Xiangfeng Duan,et al. Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires , 2000 .
[13] Bas Ketelaars,et al. Synergetic nanowire growth. , 2007, Nature nanotechnology.
[14] Charles M. Lieber,et al. Semiconductor nanowire laser and nanowire waveguide electro-optic modulators , 2005 .
[15] Jian-Gang Zhu,et al. Magnetic tunnel junctions , 2006 .
[16] N. V. Sibirev,et al. The role of surface diffusion of adatoms in the formation of nanowire crystals , 2006 .
[17] Lars Samuelson,et al. Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires. , 2005, Nano letters.
[18] Lars Samuelson,et al. Nanowire resonant tunneling diodes , 2002 .
[19] Hadis Morkoç,et al. Nitride Semiconductors and Devices , 1999 .
[20] E. Yu,et al. Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growth. , 2009, Nano letters.
[21] T. Ito,et al. An Empirical Potential Approach to Wurtzite–Zinc-Blende Polytypism in Group III–V Semiconductor Nanowires , 2006 .
[22] W. Prost,et al. High Transconductance MISFET With a Single InAs Nanowire Channel , 2007, IEEE Electron Device Letters.
[23] Lars Samuelson,et al. One-dimensional steeplechase for electrons realized , 2002 .
[24] Fang Qian,et al. Nanowire electronic and optoelectronic devices , 2006 .
[25] M. Meyyappan,et al. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor , 2004 .
[26] J. Hirth,et al. Kinetics of Diffusion-Controlled Whisker Growth , 1964 .
[27] Lars Samuelson,et al. Solid-phase diffusion mechanism for GaAs nanowire growth , 2004, Microscopy and Microanalysis.
[28] K. Dick,et al. A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires , 2005 .
[29] E. Yu,et al. Growth of InAs Nanowires on SiO2 Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles , 2007 .
[30] Shadi A Dayeh,et al. III-V nanowire growth mechanism: V/III ratio and temperature effects. , 2007, Nano letters.
[31] Charles M. Lieber,et al. Diameter-Selective Synthesis of Semiconductor Nanowires , 2000 .
[32] Anna Maria Mancini,et al. Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine , 2006 .
[33] Darija Susac,et al. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition. , 2008, Nano letters.
[34] Patrick D. Carpenter,et al. Role of molecular surface passivation in electrical transport properties of InAs nanowires. , 2008, Nano letters (Print).
[35] Yi Cui,et al. Formation of chiral branched nanowires by the Eshelby Twist. , 2008, Nature nanotechnology.
[36] Cesare Soci,et al. A systematic study on the growth of gaas nanowires by metal-organic chemical vapor deposition. , 2008, Nano letters.
[37] Walter Riess,et al. Realization of a silicon nanowire vertical surround-gate field-effect transistor. , 2006, Small.
[38] Andrew G. Glen,et al. APPL , 2001 .
[39] Charles M. Lieber,et al. Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. , 2005, Nano letters.
[40] E. Yu,et al. Transport coefficients of InAs nanowires as a function of diameter. , 2009, Small.
[41] Growth of epitaxial InAs nanowires in a simple closed system , 2005 .
[42] Lars Samuelson,et al. Single-electron transistors in heterostructure nanowires. , 2003 .
[43] Brian A. Korgel,et al. Space charge limited currents and trap concentrations in GaAs nanowires , 2006 .
[44] E. Yu,et al. Excess indium and substrate effects on the growth of InAs nanowires. , 2007, Small.
[45] S. Ghandhi,et al. Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence , 1983 .
[46] G. Wagner,et al. MOVPE growth and real structure of vertical-aligned GaAs nanowires , 2007 .
[47] M. Lazzarino,et al. Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires , 2007 .
[48] T. Katsuyama,et al. Nanometre-sized GaAs wires grown by organo-metallic vapour-phase epitaxy , 2006 .
[49] V. Grillo,et al. Vapor–Solid–Solid Growth Mechanism Driven by Epitaxial Match between Solid AuZn Alloy Catalyst Particles and ZnO Nanowires at Low Temperatures , 2008 .
[50] David Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .
[51] E. I. Givargizov. Oriented growth of whiskers of AIIIBV compounds by VLS-mechanism , 1975 .
[52] T. Bryllert,et al. Vertical high-mobility wrap-gated InAs nanowire transistor , 2006, IEEE Electron Device Letters.
[53] Kenji Hiruma,et al. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers , 1995 .
[54] Lars Samuelson,et al. Growth of one-dimensional nanostructures in MOVPE , 2004 .
[55] L. Samuelson,et al. Mass transport model for semiconductor nanowire growth. , 2005, The journal of physical chemistry. B.
[56] Nakayama,et al. Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces. , 1994, Physical review. B, Condensed matter.
[57] E. Bakkers,et al. Tunable Supercurrent Through Semiconductor Nanowires , 2005, Science.
[58] Kenji Hiruma,et al. GaAs p‐n junction formed in quantum wire crystals , 1992 .
[59] Paul K. L. Yu,et al. Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors , 2007 .
[60] Jianwei Sun,et al. Solution-liquid-solid growth of semiconductor nanowires. , 2006, Inorganic chemistry.
[61] G. B. Stringfellow,et al. Kinetics of the reaction between trimethylgallium and arsine , 1990 .
[62] K. Dick,et al. Controlled polytypic and twin-plane superlattices in iii-v nanowires. , 2009, Nature nanotechnology.
[63] Peidong Yang,et al. Silicon Vertically Integrated Nanowire Field Effect Transistors , 2006 .
[64] Song Jin,et al. Dislocation-Driven Nanowire Growth and Eshelby Twist , 2008, Science.
[65] Federico Capasso,et al. Optical properties of rotationally twinned InP nanowire heterostructures. , 2008, Nano letters.
[66] R. S. Wagner,et al. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH , 1964 .
[67] Charles M. Lieber,et al. Growth of nanowire superlattice structures for nanoscale photonics and electronics , 2002, Nature.
[68] H. Gassen,et al. A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane , 1971 .
[69] R. Chau,et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004, IEEE Transactions on Nanotechnology.
[70] Lars Samuelson,et al. Role of surface diffusion in chemical beam epitaxy of InAs nanowires , 2004 .
[71] Walter Riess,et al. Nanowire-based one-dimensional electronics , 2006 .
[72] Xiaocheng Jiang,et al. InAs/InP radial nanowire heterostructures as high electron mobility devices. , 2007, Nano letters.
[73] Timothy J. Trentler,et al. Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth , 1995, Science.
[74] L. Samuelson,et al. Tunable effective g factor in InAs nanowire quantum dots , 2005 .
[75] Charles M. Lieber,et al. Epitaxial core–shell and core–multishell nanowire heterostructures , 2002, Nature.
[76] G. Patriarche,et al. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth , 2005 .
[77] Shadi A Dayeh,et al. High electron mobility InAs nanowire field-effect transistors. , 2007, Small.
[78] E. Yu,et al. Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation , 2008 .
[79] E. Yu,et al. Field dependent transport properties in InAs nanowire field effect transistors. , 2008, Nano letters (Print).
[80] Paul K. L. Yu,et al. Transport properties of InAs nanowire field effect transistors: The effects of surface states , 2007 .
[81] Elias Vlieg,et al. Twinning superlattices in indium phosphide nanowires , 2008, Nature.
[82] C. Soci,et al. ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.
[83] Shui-Tong Lee,et al. Oxide-assisted growth and optical characterization of gallium-arsenide nanowires , 2001 .
[84] I. Lindau,et al. Unified defect model and beyond , 1980 .
[85] E. I. Givargizov. Highly Anisotropic Crystals , 1986 .
[86] Charles M. Lieber,et al. GaN nanowire lasers with low lasing thresholds , 2005 .
[87] E. Yu,et al. Direct observation of ballistic and drift carrier transport regimes in InAs nanowires , 2006 .
[88] L. Samuelson,et al. Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy , 2007 .
[89] Scanned electrical probe characterization of carrier transport behavior in InAs nanowires , 2006 .