Intrinsic thin film stresses in multilayered imaging pixels

When thin film devices are integrated in display or imaging arrays, the intrinsic mechanical stresses in the films can be severe enough to cause the films to either crack or even peel off the underlying substrate layer. This is a particular concern in large area x-ray imaging applications based on molybdenum/amorphous silicon (Mo/a-Si:H) Schottky diodes. This family of image sensors can be used for direct detection of x rays without the need for a phosphor layer [W. Zhao and J. A. Rowlands, Med. Phys. 22, 1595 (1995)]. In these sensors, the interaction of x-ray photons with Mo leads to injections of high energy electrons into a reverse-biased a-Si:H depletion layer, thereby producing an amplified output signal due to charge multiplication. The generated charge is read out by a thin film transistor (TFT) which is composed of intrinsic amorphous silicon (i-a-Si:H) as the active channel layer, silicon nitride (a-SiNx) as the insulating layer, and highly doped microcrystalline silicon (n+μc-Si:H) as the conta...

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