论文信息 - 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz - 字舞流文

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

J. Carlin | M. Gonschorek | E. Feltin | N. Grandjean | A. Alt | C. Bolognesi | R. Quay | Haifeng Sun | H. Benedickter | T. Maier