论文信息 - Optically pumped Si-based edge-emitting GeSn laser

Optically pumped Si-based edge-emitting GeSn laser

We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH<inf>4</inf> and SnCl<inf>4</inf>. The lasing threshold of 68 KW/cm<sup>2</sup> at 10K and maximum laser operating temperature of 110 K was achieved.

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