论文信息 - Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure - 字舞流文

Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure

V. Blank | S. Popova | M. M. Aleksandrova | V. I. Larchev | G. G. Skrotskaya

[1] M. Klein,et al. Raman scattering from crystalline and amorphous (GaSb)1-xGex semiconducting films , 1983 .

[2] John C. C. Fan,et al. Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetry , 1981 .

[3] B. S. Naidu,et al. Physical investigations on amorphous films of some semiconducting compounds , 1980 .

[4] N. J. Shevchik,et al. The structure of tetrahedrally coordinated amorphous semiconductors , 1973 .

[5] C. J. Smithells,et al. Metals reference book , 1949 .