The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Abstract The impact of device width on the variability of radiation-induced leakage currents in 90 nm and 65 nm CMOS technologies is investigated. The off-state leakage current variability increases with decreasing channel width for both technologies, and with increasing total ionizing dose for three different process variants from the 90 nm technology. More variability is observed for narrow width devices compared to wider devices before and after irradiation. Device-to-device variability is compared for two technologies (65 and 90 nm) and three process variants (low, standard, and high threshold voltage). These results illustrate the importance of process-induced variability on the radiation response of MOS devices and integrated circuits.