Modeling of noise for p-channel DG-FinFETs

Abstract The noise performance of p-channel Double Gate FinFETs has been studied with varying structural parameters. The effects of mobility degradation due to velocity saturation, carrier heating and channel length modulation have been taken into consideration for an accurate modeling of noise. The dependence of mobility fluctuations on the inversion carrier density has been incorporated. This has been validated by the experimental results. The noise behavior of p-channel device has been compared to that of a corresponding n-channel device. It has been observed that noise in p-channel device is comparatively higher due to higher number of oxide-trap density in it. Further, it has been noted that with the same trap density in both p-channel and n-channel device, the flicker noise in the p-channel device is lower than that of the corresponding n-channel device.

[1]  Yong-Zhong Xiong,et al.  Investigation of Low-Frequency Noise in N-Channel FinFETs From Weak to Strong Inversion , 2009, IEEE Transactions on Electron Devices.

[2]  A. Hoffmann,et al.  Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm , 2004 .

[3]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[4]  Mikael Östling,et al.  Low-Frequency Noise in Advanced MOS Devices , 2007 .

[5]  C. Sarkar,et al.  Analytical modeling of flicker and thermal noise in n-channel DG FinFETs , 2011 .

[6]  E. P. Vandamme,et al.  Critical discussion on unified 1/f noise models for MOSFETs , 2000 .

[7]  K. Yeo,et al.  Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors , 2004 .

[8]  Sheng-Lyang Jang,et al.  A unified model for high-frequency current noise of MOSFETs , 2003 .

[9]  Chih-Tang Sah,et al.  The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors , 1966 .

[10]  G. Gildenblat,et al.  PSP-based compact FinFET model describing dc and RF measurements , 2006, 2006 International Electron Devices Meeting.

[11]  Mingyan Yu,et al.  Compact Channel Noise Models for Deep-Submicron MOSFETs , 2009, IEEE Transactions on Electron Devices.

[12]  A. B. Bhattacharyya,et al.  Compact MOSFET Models for VLSI Design , 2009 .

[13]  Y. Taur,et al.  A continuous, analytic drain-current model for DG MOSFETs , 2004 .

[14]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[15]  D. Jimenez,et al.  Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs , 2007, IEEE Transactions on Electron Devices.

[16]  A.S. Roy,et al.  Noise modeling methodologies in the presence of mobility degradation and their equivalence , 2006, IEEE Transactions on Electron Devices.

[17]  J. Bokor,et al.  Low-frequency noise characteristics in p-channel FinFETs , 2002, IEEE Electron Device Letters.

[18]  G. Ghibaudo,et al.  Study of low frequency noise in the 0.18 /spl mu/m silicon CMOS transistors , 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).