论文信息 - InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*10/sup 19/ cm/sup -3/ were obtained, using CCl/sub 4/ as the dopant source. Transistors with 2*10 mu m/sup 2/ emitters achieved f/sub t/ and f/sub max/ values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of f/sub max/. >

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