Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K – 400K

This paper studies the gate and drain leakage currents of AlGaN/GaN high electron mobility transistors on SiC at subthreshold regime for the temperature range 300K - 400K. Positive and negative temperature dependences of the reverse gate current were identified depending on the gate-source bias. The second one might be related to traps located in AlGaN layer or to a virtual gate in the gate drain access region. This was investigated by DC and drain current transient measurements to identify trap effects and their signature.

[1]  V. R. Balakrishnan,et al.  Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT , 2012 .

[2]  Hideki Hasegawa,et al.  Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors , 2009 .

[3]  Shreepad Karmalkar,et al.  Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors , 2006 .

[4]  D. Floriot,et al.  Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification , 2012, Microelectron. Reliab..

[5]  Nathalie Labat,et al.  Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements , 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[6]  Y. Danto,et al.  Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs , 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

[7]  Jungwoo Joh,et al.  A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors , 2011, IEEE Transactions on Electron Devices.

[8]  Eldad Bahat-Treidel,et al.  GaN Based HEMTs for High Voltage Operation. Design, Technology and Characterization , 2012 .

[9]  Hideki Hasegawa,et al.  Leakage mechanism in GaN and AlGaN Schottky interfaces , 2004 .

[10]  S. Delage,et al.  Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[11]  Seung Jae Oh,et al.  Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma , 2012 .

[12]  A. Kurdoghlian,et al.  GaN double heterojunction field effect transistor for microwave and millimeterwave power applications , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[13]  Yutaka Ohno,et al.  Drain current DLTS of AlGaN/GaN HEMTs , 2003 .

[14]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[15]  Arif Khan,et al.  Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes , 2008 .